The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Oct. 16, 2017
Globalfoundries Inc., Grand Cayman, KY;
Rohit Galatage, Clifton Park, NY (US);
Steven Bentley, Menands, NY (US);
Puneet Harischandra Suvarna, Menands, NY (US);
Zoran Krivokapic, Santa Clara, CA (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A gate electrode structure of a transistor element may be provided as a series connection of a negative capacitor portion and a floating electrode portion. When forming the negative capacitor portion, the value of the negative capacitance may be adjusted on the basis of two different mechanisms or manufacturing processes, thereby providing superior matching of the positive floating gate electrode portion and the negative capacitor portion. For example, the layer thickness of the ferroelectric material and the effective capacitive area of the dielectric material may be adjusted on the basis of independent manufacturing processes.