The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Jan. 27, 2017
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Yanxiang Liu, Glenville, NY (US);
Haining Yang, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 21/3115 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 21/308 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/3081 (2013.01); H01L 21/30604 (2013.01); H01L 21/31155 (2013.01); H01L 21/76224 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
To avoid the problems associated with low density spin on dielectrics, some examples of the disclosure include a finFET with an oxide material having different densities. For example, one such finFET may include an oxide material located in a gap between adjacent fins, the oxide material directly contacts the adjacent fins of the plurality of fins with a first density proximate to a top layer of the oxide material and a second density proximate to a bottom layer of the oxide material and wherein the first density is greater than the second density.