The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

Oct. 30, 2017
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Takehiro Ueda, Tokyo, JP;

Assignee:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/16 (2006.01); H02M 1/34 (2007.01); H02M 7/5387 (2007.01);
U.S. Cl.
CPC ...
H03K 17/168 (2013.01); H02M 1/34 (2013.01); H02M 7/53871 (2013.01); H03K 2217/0045 (2013.01);
Abstract

A high side transistor is coupled between a high potential side power source node and an intermediate node, and a recirculation diode is coupled between a low potential side power source node and the intermediate node, thereby forming a recirculation path when the high side transistor is OFF. A power source supply line couples the high potential side power source node with one end of the high side transistor. A surge recirculation device causes a current to flow in one direction, and a surge recirculation line couples the one end of the high side transistor to the high potential side power source node through the surge recirculation device, and causes a surge generated at the one end of the high side transistor to recirculate toward the high potential side power source node.


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