The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Mar. 29, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Vibhor Jain, Essex Junction, VT (US);
Qizhi Liu, Lexington, MA (US);
Alvin J. Joseph, Williston, VT (US);
Pernell Dongmo, Essex Junction, VT (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 29/732 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 29/737 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/732 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/31111 (2013.01); H01L 29/0649 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/165 (2013.01); H01L 29/66234 (2013.01); H01L 29/66242 (2013.01); H01L 29/7371 (2013.01);
Abstract
Fabrication methods and device structures for bipolar junction transistors and heterojunction bipolar transistors. A first dielectric layer is formed and a second dielectric layer is formed on the first dielectric layer. An opening is etched extending vertically through the first dielectric layer and the second dielectric layer. A collector is formed inside the opening. An intrinsic base, which is also formed inside the opening, has a vertical arrangement relative to the collector.