The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
May. 08, 2017
Applicant:
Murata Manufacturing Co., Ltd., Kyoto-fu, JP;
Inventors:
Isao Obu, Nagaokakyo, JP;
Shigeru Yoshida, Nagaokakyo, JP;
Assignee:
Murata Manufacturing Co., Ltd., Kyoto-fu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 27/102 (2006.01); H01L 29/732 (2006.01); H01L 27/082 (2006.01); H01L 29/205 (2006.01); H01L 29/73 (2006.01); H03F 1/56 (2006.01); H03F 3/21 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1004 (2013.01); H01L 27/0823 (2013.01); H01L 27/1022 (2013.01); H01L 29/0692 (2013.01); H01L 29/0817 (2013.01); H01L 29/205 (2013.01); H01L 29/41708 (2013.01); H01L 29/66234 (2013.01); H01L 29/732 (2013.01); H01L 29/7304 (2013.01); H01L 29/7371 (2013.01); H03F 1/56 (2013.01); H03F 3/21 (2013.01); H03F 2200/222 (2013.01); H03F 2200/318 (2013.01); H03F 2200/387 (2013.01); H03F 2200/411 (2013.01);
Abstract
A high-performance HBT that is unlikely to decrease the process controllability and to increase the manufacturing cost is implemented. A heterojunction bipolar transistor includes an emitter layer, a base layer, and a collector layer on a GaAs substrate. The emitter layer is formed of InGaP. The base layer is formed of GaAsPBi having a composition that substantially lattice-matches GaAs.