The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

Mar. 16, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Harry-Hak-Lay Chuang, Singapore, SG;

Hung-Cho Wang, Taipei, TW;

Wen-Chun You, Dongshan Township, Yilan County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/226 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract

Integrated circuit structures and methods for forming the same are provided. An integrated circuit includes a dielectric layer in a memory region and a logic region. The integrated circuit structure also includes a first conductive feature in the dielectric layer in the memory region. The integrated circuit structure further includes a second conductive feature in the dielectric layer in the logic region. In addition, the integrated circuit structure includes an active memory cell over the dielectric layer in the memory region. The active memory cell is connected to the first conductive feature. The integrated circuit structure also includes a dummy memory cell over the dielectric layer in the logic region. The dummy memory cell is connected to the second conductive feature.


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