The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Apr. 14, 2015
Applicant:
Eo Technics Co., Ltd., Gyeonggi-do, KR;
Inventors:
Hoe Min Cheong, Seoul, KR;
Sang Young Park, Seoul, KR;
Assignee:
EO TECHNICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/50 (2006.01); H01L 21/268 (2006.01); H01L 23/544 (2006.01); H01L 21/67 (2006.01); H01S 3/10 (2006.01); H01L 21/02 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 21/0242 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02395 (2013.01); H01L 21/268 (2013.01); H01L 21/67282 (2013.01); H01L 21/78 (2013.01); H01S 3/10 (2013.01); H01L 21/67092 (2013.01); H01L 2223/5446 (2013.01);
Abstract
Disclosed are a laser processing method for cutting a semiconductor wafer having a metal layer formed thereon and a laser processing device. The disclosed laser processing method transmits a plurality of laser beams, which propagate coaxially, to the semiconductor wafer, thereby forming focusing points in positions adjacent to a surface of the metal layer, which constitutes a boundary with the semiconductor wafer, and to one surface of the semiconductor wafer, respectively.