Method of forming a semiconductor component having multiple bipolar transistors with different characteristics

Abstract

A semiconductor component is formed by providing a substrate having partially formed first and second transistors, a base electrode stack formed over the transistors, first and second emitter windows formed in the electrode stack over first and second collector regions of the transistors, and an oxide layer extending over the collector regions. A process entails forming a mask layer in a selected emitter window, optionally forming a selectively implanted collector (SIC) in an un-masked emitter window, and removing an oxide layer and forming an epitaxial layer in the un-masked emitter window. The process further entails forming an oxide layer over the epitaxial layer and repeating the operations of forming a mask layer for another selected emitter window, optionally forming a SIC in another un-masked emitter window, and removing an oxide layer and forming an epitaxial layer in the un-masked emitter window. The epitaxial layers may have different epitaxial growth profiles.