The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Feb. 06, 2017
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Leonid Romm, Pleasanton, CA (US);
Alan Jensen, Tracy, CA (US);
Xin Zhang, Los Altos, CA (US);
Gerardo Delgadino, Milpitas, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 29/66 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/67069 (2013.01); H01L 29/66795 (2013.01);
Abstract
A method for forming a semiconductor device in a plasma processing chamber is provided. An atomic layer etch selectively etches SiO with respect to SiN and deposits a fluorinated polymer. The fluorinated polymer layer is stripped, comprising flowing a stripping gas comprising oxygen into the plasma processing chamber, forming a plasma from the stripping gas, and stopping the flow of the stripping gas. A SiN layer is selectively etched with respect to SiO and SiGe and Si.