The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Apr. 05, 2016
Denso Corporation, Kariya, Aichi-pref., JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Takeshi Endo, Kariya, JP;
Atsuya Akiba, Kariya, JP;
Yuichi Takeuchi, Kariya, JP;
Hidefumi Takaya, Toyota, JP;
Sachiko Aoi, Nagakute, JP;
DENSO CORPORATION, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-shi, JP;
Abstract
A semiconductor device includes: a substrate having a cell region with a semiconductor element and an outer peripheral region; and a drift layer on the substrate. The semiconductor element includes a base region, a source region, a trench gate structure, a deep layer deeper than a gate trench, a source electrode, and a drain electrode. The outer peripheral region has a recess portion in which the drift layer are exposed, and a guard ring layer. The guard ring layer includes multiple guard ring trenches having a frame shape, surrounding the cell region and arranged on an exposed surface of the drift layer, and a first guard ring in the guard ring trenches. Each of the linear deep trenches has a width equal to a width of each of the linear guard ring trenches.