The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

Mar. 24, 2017
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Weijun Liu, Cedar Park, TX (US);

Timothy Brian Stachowiak, Austin, TX (US);

James P. DeYoung, Dallas, TX (US);

Niyaz Khusnatdinov, Round Rock, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); G03F 7/00 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02304 (2013.01); G03F 7/0002 (2013.01); H01L 21/022 (2013.01); H01L 21/0212 (2013.01); H01L 21/0273 (2013.01);
Abstract

Facilitating throughput in nanoimprint lithography processes by using an imprint resist including fluorinated components and a substrate treated with a pretreatment composition to promote spreading of an imprint resist on the substrate. The interfacial surface energy between the pretreatment composition and air exceeds the interfacial surface energy between the imprint resist and air by at least 1 mN/m, and the contact angle of the imprint resist on the surface of the nanoimprint lithography template is less than 15°.


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