The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

Mar. 28, 2014
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventor:

Oguz H. Elibol, Mountain View, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/28 (2006.01); G01N 33/48 (2006.01); G01N 27/327 (2006.01); C12Q 1/6869 (2018.01); C23C 14/34 (2006.01); C23C 16/455 (2006.01); C23C 18/16 (2006.01); G01N 33/487 (2006.01);
U.S. Cl.
CPC ...
G01N 27/3278 (2013.01); C12Q 1/6869 (2013.01); C23C 14/34 (2013.01); C23C 16/45525 (2013.01); C23C 18/1633 (2013.01); G01N 33/48721 (2013.01);
Abstract

An apparatus including a circuit substrate including a contact in a metal layer; and a transducer including a first electrode deposited on and coupled to a sidewall of the contact and a second electrode coupled to a conductor through which voltage can be applied, wherein the second electrode includes a profile aligned to the sidewall of the contact and separated from the first electrode by a gap. A method including forming a transducer adjacent a contact in a metal layer on a substrate, the transducer including a first electrode disposed on a sidewall of the contact and a second electrode coupled to a conductor through which voltage can be applied, wherein the second electrode includes a profile aligned to the sidewall of the contact and separated from the first electrode by a gap.


Find Patent Forward Citations

Elibol, Oguz. (2018). Self aligned and scalable nanogap post processing for dna sequencing (U.S. Patent No. 10132771). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10132771

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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