The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
May. 24, 2016
Infineon Technologies Austria Ag, Villach, AT;
Marija Borna Tutuc, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A multi-layer arrangement of III-V semiconductor layers includes a strained III-V semiconductor layer having a concentration of a constituent element which effects intensity of a conductive channel formed in the multi-layer arrangement. Lattice parameters of the strained III-V semiconductor layer are determined by generating a first scan in a Qx direction for a chosen reflection in reciprocal space based on diffracted X-Ray beam intensity measurements in the Qx direction. A second scan is generated in a Qz direction for the chosen reflection in the reciprocal space based on diffracted X-Ray beam intensity measurements in the Qz direction. The second scan is aligned with a diffracted X-Ray peak in the first scan which identifies the strained III-V semiconductor layer. The degree of strain of the strained III-V semiconductor layer is determined based on the first scan and the concentration of the constituent element based on the second scan.