The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Dec. 23, 2014
Maxim Integrated Products, Inc., San Jose, CA (US);
Arvin Emadi, Santa Clara, CA (US);
Nicole D. Kerness, Menlo Park, CA (US);
Cheng-Wei Pei, Belmont, CA (US);
Joy T. Jones, Fremont, CA (US);
Arkadii V. Samoilov, Saratoga, CA (US);
Ke-Cai Zeng, Fremont, CA (US);
MAXIM INTEGRATED PRODUCTS, INC., San Jose, CA (US);
Abstract
Techniques are provided to furnish a light sensor that includes a filter positioned over a photodetector to filter visible and infrared wavelengths to permit the sensing of ultraviolet (UV) wavelengths. In one or more implementations, the light sensor comprises a semiconductor device (e.g., a die) that includes a substrate. A photodetector (e.g., photodiode, phototransistor, etc.) is formed in the substrate proximate to the surface of the substrate. In one or more implementations, the substrate comprises a silicon on insulator substrate (SOI). A filter (e.g., absorption filter, interference filter, flat pass filter, McKinlay-Diffey Erythema Action Spectrum-based filter, UVA/UVB filter, and so forth) is disposed over the photodetector. The filter is configured to filter infrared light and visible light from light received by the light sensor to at least substantially block infrared light and visible light from reaching the photodetector. The thickness of the SOI substrate can be tailored to modify received UV/visible wavelength ratios.