The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Feb. 06, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Yu-Ying Lin, Tainan, TW;
Kuan Hsuan Ku, Tainan, TW;
I-Cheng Hu, Kaohsiung, TW;
Chueh-Yang Liu, Tainan, TW;
Shui-Yen Lu, Tainan, TW;
Yu Shu Lin, Pingtung County, TW;
Chun Yao Yang, Kaohsiung, TW;
Yu-Ren Wang, Tainan, TW;
Neng-Hui Yang, Hsinchu, TW;
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially within the semiconductor substrate. The gate structure includes a gate dielectric layer formed over the semiconductor substrate, a gate electrode formed over the gate dielectric layer, and a spacer formed on side surfaces of the gate dielectric layer and the gate electrode. A laterally extending portion of the epitaxial structure extends laterally at an area below a top surface of the semiconductor substrate in a direction toward an area below the gate structure. A lateral end of the laterally extending portion is below the spacer.