The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Dec. 16, 2016
Flosfia Inc., Kyoto-shi, Kyoto, JP;
Masaya Oda, Kyoto, JP;
Rie Tokuda, Kyoto, JP;
Hitoshi Kambara, Kyoto, JP;
Katsuaki Kawara, Kyoto, JP;
Toshimi Hitora, Kyoto, JP;
FLOSFIA INC., Kyoto-shi, JP;
Abstract
A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.