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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10128261 B1

PDFFull Text
Date of Patent:
Nov. 13, 2018

Filed:

Feb. 04, 2015

Cobalt-containing conductive layers for control gate electrodes in a memory structure

Applicant:

Sandisk Technologies Inc., Plano, TX (US);

Inventors:

Raghuveer S. Makala, Campbell, CA (US);

Rahul Sharangpani, Fremont, CA (US);

Sateesh Koka, Milpitas, CA (US);

Genta Mizuno, Yokkaichi, JP;

Naoki Takeguchi, Yokkaichi, JP;

Senaka Krishna Kanakamedala, San Jose, CA (US);

George Matamis, Danville, CA (US);

Yao-Sheng Lee, Tampa, FL (US);

Johann Alsmeier, San Jose, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:

The Marbury Law Group PLLC

Primary Examiner:

Eduardo A Rodela

Assistant Examiner:

Nilufa Rahim

Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 27/11563 (2017.01); H01L 27/11578 (2017.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 27/11519 (2017.01); H01L 27/11524 (2017.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); H01L 27/11568 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 21/32133 (2013.01); H01L 21/76841 (2013.01); H01L 21/76877 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11563 (2013.01); H01L 27/11565 (2013.01); H01L 27/11578 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/7883 (2013.01); H01L 29/7889 (2013.01); H01L 29/7926 (2013.01); H01L 27/11568 (2013.01);
Abstract

A memory film and a semiconductor channel can be formed within each memory opening that extends through a stack including an alternating plurality of insulator layers and sacrificial material layers. After formation of backside recesses through removal of the sacrificial material layers selective to the insulator layers, a metallic barrier material portion can be formed in each backside recess. A cobalt portion can be formed in each backside recess. Each backside recess can be filled with a cobalt portion alone, or can be filled with a combination of a cobalt portion and a metallic material portion including a material other than cobalt.

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