The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Jul. 11, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Ki-seok Lee, Hwaseong-si, KR;
Dae-ik Kim, Hwaseong-si, KR;
Yoo-sang Hwang, Suwon-si, KR;
Bong-soo Kim, Yongin-si, KR;
Je-min Park, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a substrate including a cell active region and a peripheral active region, a direct contact arranged on a cell insulating pattern formed on the substrate and connected to the cell active region, a bit line structure including a thin conductive pattern, contacting a top surface of the direct contact and extending in one direction, and a peripheral gate structure in the peripheral active region. The peripheral gate structure include a stacked structure of a peripheral gate insulating pattern and a peripheral gate conductive pattern, the thin conductive pattern includes a first material and the peripheral gate conductive pattern include the first material, and a level of an upper surface of the thin conductive pattern is lower than a level of an upper surface of the peripheral gate conductive pattern.