The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Apr. 27, 2017
Applicant:
Mediatek Inc., Hsin-Chu, TW;
Inventors:
Assignee:
MEDIATEK INC., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2006.01); H01L 23/12 (2006.01); H01L 23/528 (2006.01); H01L 23/31 (2006.01); H01L 23/66 (2006.01); H01L 23/538 (2006.01); H01L 23/552 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5386 (2013.01); H01L 23/3185 (2013.01); H01L 23/5383 (2013.01); H01L 23/5389 (2013.01); H01L 23/552 (2013.01); H01L 23/66 (2013.01); H01L 24/16 (2013.01); H01L 24/20 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/16195 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/24195 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/92125 (2013.01); H01L 2924/1205 (2013.01); H01L 2924/1206 (2013.01); H01L 2924/1207 (2013.01); H01L 2924/1421 (2013.01); H01L 2924/1435 (2013.01); H01L 2924/1438 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15321 (2013.01); H01L 2924/19011 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/19105 (2013.01); H01L 2924/19106 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/37001 (2013.01);
Abstract
A semiconductor package structure including a redistribution layer (RDL) structure having a first surface and a second surface opposite thereto is provided. The RDL structure includes an inter-metal dielectric (IMD) layer and a first conductive layer disposed at a first layer-level of the IMD layer. A molding compound covers the first surface of the RDL structure. A first semiconductor die is disposed over the second surface of the RDL structure and electrically coupled to the RDL structure. A plurality of bump structures is disposed over the second surface of the RDL structure and electrically coupled to the RDL structure.