The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Aug. 19, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Kwangsu Kim, Seoul, KR;
Byoung Jae Park, Hwaseong-si, KR;
Yongsun Ko, Suwon-si, KR;
Kyunghyun Kim, Seoul, KR;
ChangSup Mun, Suwon-si, KR;
Kijong Park, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/02057 (2013.01); H01L 21/31116 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01);
Abstract
The inventive concepts provide a method of completely removing a damage region of a surface of an etch target layer after plasma-etching the etch target layer. The method includes performing a first post-etch plasma treatment process using a first post-treatment gas on the plasma-etched etch target layer. A polarity of ions of the first post-treatment gas may be the same as a polarity of bias power applied to a stage in a plasma apparatus.