The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
May. 11, 2017
Lam Research Corporation, Fremont, CA (US);
William T. Lee, Dublin, CA (US);
Bart J. van Schravendijk, Palo Alto, CA (US);
David Charles Smith, Lake Oswego, OR (US);
Michal Danek, Cupertino, CA (US);
Patrick A. Van Cleemput, San Jose, CA (US);
Ramesh Chandrasekharan, Portland, OR (US);
LAM RESEARCH CORPORATION, Fremont, CA (US);
Abstract
Efficient integrated sequential deposition of alternating layers of dielectric and conductor, for example oxide/metal or metal nitride, e.g., SiO/TiN, in a single tool, and even in a single process chamber enhances throughput without compromising quality when directly depositing a OMOM stack with many layers. Conductor and dielectric film deposition of a stack of at least 20 conductor/dielectric film pairs in the same processing tool or chamber, without breaking vacuum between the film depositions, such that there is no substantial cross-contamination between the conductor and dielectric film depositions, can be achieved.