The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
May. 12, 2017
Avalanche Technology, Inc., Fremont, CA (US);
Dean K. Nobunaga, Cupertino, CA (US);
Avalanche Technology, Inc., Fremont, CA (US);
Abstract
The present invention is directed to a method for sensing the resistance state of a memory cell, which includes a memory element and a two-terminal selector coupled in series between first and second conductive lines. The method includes the steps of precharging at least the first conductive line to attain a potential drop across the memory cell that is sufficiently large to turn on the two-terminal selector; allowing the voltage of the first conductive line to decay by discharging through the second conductive line; measuring the voltage of the first conductive line after a discharge period to determine the resistance state of the memory cell; concluding that the memory cell is in the high resistance state if the measured voltage is greater than a reference level; and concluding that the memory cell is in the low resistance state if the measured voltage is less than the reference level.