The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Aug. 05, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Ye-Sin Ryu, Seoul, KR;
Hoi-Ju Chung, Yongin-si, KR;
Sang-Uhn Cha, Yongin-si, KR;
Young-Yong Byun, Seoul, KR;
Seong-Jin Jang, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G06F 11/10 (2006.01); G11C 29/52 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G06F 3/064 (2013.01); G06F 3/0619 (2013.01); G06F 3/0634 (2013.01); G06F 3/0679 (2013.01); G11C 29/52 (2013.01);
Abstract
A semiconductor memory device includes a memory cell array, a control logic circuit, an error correction circuit and a first path selection circuit. The memory cell array includes a plurality of bank arrays. The control logic circuit controls access to the memory cell array and generates a density mode signal based on a command. The first path selection circuit selectively provides write data to the error correction circuit.