The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Sep. 28, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chue San Yoo, Hsinchu, TW;

Ching-Yueh Chen, Hsinchu, TW;

Wen-Hao Cheng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70916 (2013.01); G03F 7/707 (2013.01); G03F 7/70875 (2013.01); H01L 21/67115 (2013.01); H01L 21/67253 (2013.01);
Abstract

An apparatus for generating at least one particle shield in photolithography includes a first component and a second component. The first component and the second component are operable to form a first particle shield of the at least one particle shield for blocking particles from contacting a proximate surface of an object. The first component includes a first gas injector, and the second component includes a first gas extractor corresponding to the first gas injector. The first gas injector is configured to blow out a gas, thereby forming the first particle shield. The first gas extractor is configured to work with the first gas injector for providing gas pressure gradient for the first particle shield.


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