The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Aug. 29, 2014
Macronix International Co., Ltd., Hsinchu, TW;
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Abstract
A high voltage semiconductor device including a P type substrate, a high voltage N type well, a first P type well, a drift region, and a P type doping layer is provided. The high voltage N type well and the P type doping layer, which is formed in a region located below the first P type well and the drift region, are formed in the P type substrate. The first P type well is formed in the high voltage N type well. A bottom of the first P type well and a bottom of the P type doping layer are separated from a surface of the P type substrate by a first depth and a second depth larger than the first depth, respectively. The drift region is formed in the high voltage N type well and extending down from the surface of the P type substrate.