The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Jul. 04, 2016
Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Tsutomu Hori, Itami, JP;
Hironori Itoh, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
The silicon carbide layer has a second main surface. The second main surface has a peripheral region within 5 mm from an outer edge thereof, and a central region surrounded by the peripheral region. The silicon carbide layer has a central surface layer. An average value of a carrier concentration in the central surface layer is not less than 1×10cmand not more than 5×10cm. Circumferential uniformity of the carrier concentration is not more than 2%, and in-plane uniformity of the carrier concentration is not more than 10%. An average value of a thickness of a portion of the silicon carbide layer sandwiched between the central region and the silicon carbide single-crystal substrate is not less than 5 μm. Circumferential uniformity of the thickness is not more than 1%, and in-plane uniformity of the thickness is not more than 4%.