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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10121859 B1

PDFFull Text
Date of Patent:
Nov. 06, 2018

Filed:

Mar. 13, 2017

Method of manufacturing semiconductor devices with transistor cells and semiconductor device

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Ravi Keshav Joshi, Villach, AT;

Johannes Baumgartl, Riegersdorf, AT;

Oliver Blank, Villach, AT;

Oliver Hellmund, Neubiberg, DE;

Martin Poelzl, Ossiach, AT;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Christine Enad

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 21/78 (2006.01); H01L 21/68 (2006.01); H01L 21/683 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0696 (2013.01); B81B 7/008 (2013.01); B81C 1/00246 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 29/0865 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); B81B 2207/015 (2013.01); B81C 2203/0707 (2013.01); H01L 2221/68327 (2013.01);
Abstract

First reinforcement stripes are formed on a process surface of a base substrate. A first epitaxial layer covering the first reinforcement stripes is formed on the first process surface. Second reinforcement stripes are formed on the first epitaxial layer. A second epitaxial layer covering the second reinforcement stripes is formed on exposed portions of the first epitaxial layer. Semiconducting portions of transistor cells are formed in or portions of micro electromechanical structures are formed from the second epitaxial layer.

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