The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2018

Filed:

Mar. 29, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Kyung-Eun Kim, Seoul, KR;

Yongkwan Kim, Yongin-si, KR;

Semyeong Jang, Gunpo-si, KR;

Jaehyoung Choi, Hwaseong-si, KR;

Yoosang Hwang, Suwon-si, KR;

Bong-Soo Kim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10855 (2013.01); H01L 27/10876 (2013.01);
Abstract

A semiconductor device includes storage electrodes on a substrate and one or more supporters configured to couple one or more portions of the storage electrodes. The semiconductor device may include multiple non-intersecting supporters extending in parallel to a surface of the substrate. At least one supporter may have an upper surface that is substantially coplanar with upper surfaces of the storage electrodes. The storage electrodes may include a capacitor dielectric layer that conformally covers one or more surfaces of the storage electrodes and one or more supporters. A storage electrode may include upper and lower storage electrodes coupled together. The upper and lower storage electrodes may have different horizontal widths.


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