The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Jan. 03, 2017
International Business Machines Corporation, Armonk, NY (US);
Praneet Adusumilli, Albany, NY (US);
Emre Alptekin, Fishkill, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Balasubramanian Pranatharthiharan, Watervliet, NY (US);
Shom S. Ponoth, Los Angeles, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor substrate includes lower source/drain (S/D) regions. A replacement metal gate (RMG) structure is arranged upon the semiconductor substrate between the lower S/D regions. Raised S/D regions are arranged upon the lower S/D regions adjacent to the RMG structure, respectively. The raised S/D regions may be recessed to form contact trenches. First self-aligned contacts are located upon the raised S/D regions within a first active area and second self-aligned contacts are located upon the recessed raised S/D regions in the second active area. The first and second self-aligned contacts allows for independent reduction of source drain contact resistances. The first self-aligned contacts may be MIS contacts or metal silicide contacts and the second self-aligned contacts may be metal-silicide contacts.