The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2018

Filed:

Mar. 31, 2016
Applicants:

Hessam Ghassemi, Raleigh, NC (US);

Andrew C. Lang, Branchburg, NJ (US);

Mitra L. Taheri, Philadelphia, PA (US);

Inventors:

Hessam Ghassemi, Raleigh, NC (US);

Andrew C. Lang, Branchburg, NJ (US);

Mitra L. Taheri, Philadelphia, PA (US);

Assignee:

DREXEL UNIVERSITY, Philadelphia, PA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/66 (2006.01); G01R 31/26 (2014.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 22/32 (2013.01); G01R 31/2642 (2013.01); H01L 22/14 (2013.01); G01R 31/2644 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01);
Abstract

A method of conducting an in situ reliability test on a cross-section of a device with layered structure at micron-scale and at least two electrodes. The method includes steps of locating an electron transparent cross-sectional portion of the device in a holder and transmitting a direct current bias voltage to the cross-sectional portion of the device through at least two electrodes of the device, and observing and quantifying the microstructural changes of the device cross-section on the holder. A system for conducting an in situ reliability test on a device with a layered structure at a micron-scale and at least two electrodes is also provided.


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