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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10121606 B1

PDFFull Text
Date of Patent:
Nov. 06, 2018

Filed:

May. 10, 2016

Method of manufacturing an electrode for an energy storage device

Applicant:

Senju Metal Industry Co., Ltd., Tokyo, JP;

Inventors:

Katsuji Nakamura, Fukuoka, JP;

Kaichi Tsuruta, Tochigi, JP;

Yuji Ozaki, Tochigi, JP;

Shigeaki Watarai, Saitama, JP;

Hidenori Takagi, Yamanashi, JP;

Yutaka Ohori, Yamanashi, JP;

Assignee:

Senju Metal Industry Co., Ltd., Tokyo, JP;

Attorney:

Chernoff, Vilhauer, McClung & Stenzel, LLP

Primary Examiner:

Thiem Phan

Int. Cl.
CPC ...
H01R 9/00 (2006.01); H05K 3/00 (2006.01); H01G 11/50 (2013.01); C23C 18/16 (2006.01); C23C 18/18 (2006.01); C23C 18/54 (2006.01); H01G 11/24 (2013.01); H01G 11/66 (2013.01); H01M 2/20 (2006.01); H01M 2/30 (2006.01); H01B 1/02 (2006.01); H01B 13/32 (2006.01); C25D 5/12 (2006.01); C25D 5/44 (2006.01); C23C 18/31 (2006.01); C23C 18/32 (2006.01); C23C 18/48 (2006.01); C25D 3/12 (2006.01); C25D 3/22 (2006.01); C25D 3/30 (2006.01); C25D 3/56 (2006.01); C25D 3/60 (2006.01); H01G 11/06 (2013.01); H01G 11/30 (2013.01); H01M 2/26 (2006.01); C23C 18/36 (2006.01); C23C 18/52 (2006.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01G 11/50 (2013.01); C23C 18/1651 (2013.01); C23C 18/1653 (2013.01); C23C 18/1827 (2013.01); C23C 18/31 (2013.01); C23C 18/32 (2013.01); C23C 18/48 (2013.01); C23C 18/54 (2013.01); C25D 3/12 (2013.01); C25D 3/22 (2013.01); C25D 3/30 (2013.01); C25D 3/565 (2013.01); C25D 3/60 (2013.01); C25D 5/12 (2013.01); C25D 5/44 (2013.01); H01B 1/023 (2013.01); H01B 13/32 (2013.01); H01G 11/06 (2013.01); H01G 11/24 (2013.01); H01G 11/30 (2013.01); H01G 11/66 (2013.01); H01M 2/202 (2013.01); H01M 2/26 (2013.01); H01M 2/30 (2013.01); C23C 18/36 (2013.01); C23C 18/52 (2013.01); H01M 2004/028 (2013.01); Y02E 60/13 (2013.01); Y10T 29/49147 (2015.01);
Abstract

An electrode for an energy storage device including a Zn layer or Zn alloy layer, a Ni layer, and a Sn layer or Sn alloy layer formed by plating on a connecting terminal part of a positive electrode composed of Al so that the resistance value at the contacting point is reduced and the voltage of the energy storage device can be effectively supplied without any drop. Accordingly, this electrode can be soldered to a Cu negative electrode, which is composed of metal that is different species from Al, through a Sn layer or a Sn alloy layer so that jointing strength of the Al positive electrode and the Cu negative electrode can be enhanced. The contacting area is increased in comparison with the conventional jointing by spot-welding or conventional fastening by a bolt so that the resistance value at the contacting point is reduced.

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