The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2018

Filed:

Nov. 16, 2017
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventors:

Yao Zhou, Shanghai, CN;

Hao Ni, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/24 (2006.01); G11C 16/28 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/24 (2013.01); G11C 16/28 (2013.01); G11C 16/30 (2013.01);
Abstract

A nonvolatile memory includes a first array bank coupled to a first bit-line, a second array bank coupled to a second bit-line, a pre-charging circuit, a first selection circuit, a second selection circuit, and a sense amplifier. An address enable signal sent to the first selection circuit controls whether the pre-charging circuit needs to pre-charge the first bit-line and the second bit-line. The sense amplifier is configured to compare a first voltage from the first output terminal of the pre-charging circuit with a second voltage from the second output terminal of the pre-charging circuit to obtain a result indicating data information stored in the first array bank or in the second array bank. The second selection circuit is configured to connect a reference current to the first input terminal or the second input terminal of the sense amplifier based on a first word-line signal and a second word-line signal.


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