Method of manufacturing an epitaxial wafer comprising measuring a level difference between a front surface of a susceptor and an upper surface of a lift pin and adjusting a ratio of the heat source output

Abstract

Provided is a method of manufacturing an epitaxial wafer, which includes vapor-phase growing an epitaxial layer on a substrate W placed on a susceptorin a state where an upper surfaceof a lift pininserted in a through-hole H of the susceptorretracts or projects with respect to an upper opening Hof the through-hole H. A level difference D from the upper surfaceof the lift pinto the opening Hof the through-hole H is measured with laser light, and outputs, during epitaxial growth, of heaterslocated above and beneath the susceptorare adjusted on the basis of the measured level difference D. Thus, a method of manufacturing an epitaxial wafer, which facilitates adjustment of the outputs of the heat sources during epitaxial growth, is provided.