The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Jan. 15, 2018
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Jean-Paul Eggermont, Pellaines, BE;
Johan Camiel Julia Janssens, Asse, BE;
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
An illustrative bidirectional MOSFET switch includes a body region, a buried layer, a gate terminal, a first configuration switch, and a second configuration switch. The body region is a semiconductor of a first type separating a source region and a drain region that are a semiconductor of a second type. The buried layer is a semiconductor of the second type separating the body region from a substrate that is a semiconductor of the first type. The gate terminal is drivable to form a channel in the body region, thereby enabling conduction between the source terminal and the drain terminal. The first configuration switch disconnects the body terminal from the source terminal when the source terminal voltage exceeds the drain terminal voltage; and the second configuration switch connects the body terminal to the buried layer terminal when the source terminal voltage exceeds the drain terminal voltage.