The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
May. 10, 2017
Applicant:
Advantest Corporation, Nerima-ku, Tokyo, JP;
Inventor:
Taku Sato, Tokyo, JP;
Assignee:
ADVANTEST CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/304 (2006.01); H01L 21/3065 (2006.01); H01L 21/18 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/0254 (2013.01); H01L 21/187 (2013.01); H01L 21/304 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01);
Abstract
A support substrate is bonded to a GaN epitaxial substrate including at least an electron transport layer and an electron supply layer grown on a growth substrate in the Ga-polar direction such that the support substrate faces the Ga-plane of the GaN epitaxial substrate. Furthermore, at least the growth substrate is removed from the GaN epitaxial substrate so as to expose an N-plane of the GaN epitaxial substrate. Subsequently, a semiconductor element is formed on the N-plane side.