The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Jun. 19, 2017
Sandisk Technologies Llc, Plano, TX (US);
Ashish Baraskar, Santa Clara, CA (US);
Naohiro Hosoda, Yokkaichi, JP;
Yanli Zhang, San Jose, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Hiroyuki Tanaka, Yokkaichi, JP;
Ryo Nakamura, Yokkaichi, JP;
Tadashi Nakamura, Yokkaichi, JP;
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a semiconductor surface, a memory opening extending through the alternating stack, a semiconductor pedestal channel portion located at a bottom portion of the memory opening and contacting a top surface of the semiconductor surface, and a memory stack structure located in the memory opening and contacting a top surface of the pedestal channel portion. The memory stack structure includes a memory film and a vertical semiconductor channel located inside the memory film. A maximum lateral extent of the pedestal channel portion is greater than a maximum lateral dimension of an entire interface between the pedestal channel portion and the memory stack structure.