The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Sep. 05, 2017
Nanya Technology Corporation, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A method of forming fine island patterns of semiconductor devices includes: forming a plurality of first mask pillars on a hard mask layer on a substrate; forming an upper buffer mask layer on the hard mask layer to cover the first mask pillars; patterning a plurality of islands in the upper buffer mask layer; separating each of the islands into a plurality of sub-islands; etching the upper buffer mask layer to form a plurality of second mask pillars on the hard mask layer; etching an exposed portion of the hard mask layer exposed by the first mask pillars and the second mask pillars until portions of the substrate are etched; and removing the first mask pillars, the second mask pillars, and remaining portions of the hard mask layer.