The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Aug. 28, 2017
Hitachi Kokusai Electric Inc., Toyko, JP;
Satoshi Shimamoto, Toyama, JP;
Hiroshi Ashihara, Toyama, JP;
Kazuyuki Toyoda, Toyama, JP;
Naofumi Ohashi, Toyama, JP;
HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;
Abstract
There is provided a method of manufacturing a semiconductor device which includes: supplying a process gas to a process chamber in a state in which a substrate with an insulating film formed thereon is mounted on a substrate support part inside the process chamber; supplying a first power from a plasma generation part to the process chamber to generate plasma and forming a first silicon nitride layer on the insulating film; and supplying a second power from an ion control part to the process chamber in parallel with the generation of plasma, to form a second silicon nitride layer having lower stress than that of the first silicon nitride layer on the first silicon nitride layer.