The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Jun. 30, 2017
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Cesare Torti, Pavia, IT;

Fabio Enrico Carlo Disegni, Spino d'adda, IT;

Davide Manfre′, Pandino, IT;

Massimo Fidone, Misterbianco, IT;

Assignee:

STMICROELECTRONICS S.R.L., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 8/08 (2006.01); H01L 27/24 (2006.01); H01L 29/78 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0028 (2013.01); G11C 8/08 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0038 (2013.01); G11C 13/0069 (2013.01); H01L 27/2436 (2013.01); H01L 29/7841 (2013.01); H01L 45/06 (2013.01);
Abstract

A memory device includes an array of phase-change memory cells and a word line. The memory device includes a control circuit, a first pull-up MOSFET and a second pull-up MOSFET connected in series between a first power-supply node set at a first supply voltage and the word line, a first pull-down MOSFET and a second pull-down MOSFET connected in series between the word line and a second power-supply node set at a reference potential, and a biasing MOSFET connected between the word line and a third power-supply node set at a second supply voltage higher than the first supply voltage. The first and second pull-up MOSFETs and the first and second pull-down MOSFETs have breakdown voltages lower than the breakdown voltage of the biasing MOSFET.


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