The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Dec. 19, 2016
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Zhihong Luo, Singapore, SG;

Qi Chen, Singapore, SG;

Joanne Jinling Wang, Singapore, SG;

Yi Liang, Singapore, SG;

Fei Xu, Singapore, SG;

Benjamin Shui Chor Lau, Singapore, SG;

Bai Yen Nguyen, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/04 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01);
Abstract

Integrated circuits including semiconductor memory devices, read assist circuits for semiconductor memory devices, and methods for operating such circuits are provided. In an embodiment, a read assist circuit for use in a semiconductor memory device is provided. The read assist circuit includes a first drive device for driving a wordline of the semiconductor memory device to a wordline driving voltage. The first drive device operates at a first current. The read assist circuit also includes a second drive device for maintaining the wordline of the semiconductor memory device at the wordline driving voltage. The second drive device operates at a second current lower than the first current.


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