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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10112259 B1

PDFFull Text
Date of Patent:
Oct. 30, 2018

Filed:

Apr. 10, 2015

Damage isolation by shaped beam delivery in laser scribing process

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

James M. Holden, San Jose, CA (US);

Nir Merry, Mountain View, CA (US);

Todd Egan, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:

Schwabe, Williamson & Wyatt, P.C.

Primary Examiner:

Dana Ross

Assistant Examiner:

James Sims, III

Int. Cl.
CPC ...
B23K 26/06 (2014.01); B23K 26/00 (2014.01); B23K 26/36 (2014.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/78 (2006.01); B23K 26/364 (2014.01); B23K 26/0622 (2014.01); B23K 26/40 (2014.01); B23K 103/16 (2006.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
B23K 26/0635 (2013.01); B23K 26/0624 (2015.10); B23K 26/364 (2015.10); B23K 26/40 (2013.01); H01J 37/32889 (2013.01); H01L 21/30655 (2013.01); H01L 21/67069 (2013.01); H01L 21/67196 (2013.01); H01L 21/67207 (2013.01); H01L 21/78 (2013.01); B23K 2203/172 (2015.10); B23K 2203/42 (2015.10); B23K 2203/50 (2015.10); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01);
Abstract

Methods and apparatuses for dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating by a laser beam with a centrally peaked spatial power profile to form an ablated trench in the substrate below thin film device layers which is positively sloped. In an embodiment, a femtosecond laser forms a positively sloped ablation profile which facilitates vertically-oriented propagation of microcracks in the substrate at the ablated trench bottom. With minimal lateral runout of microcracks, a subsequent anisotropic plasma etch removes the microcracks for a cleanly singulated chip with good reliability.

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