The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Dec. 27, 2013
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Matthew Sysak, Santa Barbara, CA (US);

Jock Bovington, San Diego, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 10/06 (2006.01); H01S 5/12 (2006.01); G02B 6/122 (2006.01); G02B 6/124 (2006.01); H01S 5/065 (2006.01); H01S 5/30 (2006.01); H04B 10/66 (2013.01); H04B 10/80 (2013.01); H01S 5/10 (2006.01); H01S 5/02 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1228 (2013.01); G02B 6/124 (2013.01); G02B 6/1228 (2013.01); H01S 5/0654 (2013.01); H01S 5/1014 (2013.01); H01S 5/1032 (2013.01); H01S 5/1206 (2013.01); H01S 5/1237 (2013.01); H01S 5/3013 (2013.01); H04B 10/66 (2013.01); H04B 10/801 (2013.01); H01S 5/021 (2013.01); H01S 5/1225 (2013.01); H01S 5/1231 (2013.01); H01S 5/22 (2013.01);
Abstract

Monolithic asymmetric optical waveguide grating resonators including an asymmetric resonant grating are disposed in a waveguide. A first grating strength is provided along a first grating length, and a second grating strength, higher than the first grating strength, is provided along a second grating length. In advantageous embodiments, the effective refractive index along first grating length is substantially matched to the effective refractive index along second grating length through proper design of waveguide and grating parameters. A well-matched effective index of refraction may permit the resonant grating to operate in a highly asymmetric single longitudinal mode (SLM). In further embodiments, an asymmetric monolithic DFB laser diode includes front and back grating sections having waveguide and grating parameters for highly asymmetric operation.


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