The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Sep. 30, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device includes forming a fin structure over a substrate. The fin structure has a top surface and side surfaces and the top surface is located at a height Hmeasured from the substrate. An insulating layer is formed over the fin structure and the substrate. In the first recessing, the insulating layer is recessed to a height Tfrom the substrate, so that an upper portion of the fin structure is exposed from the insulating layer. A semiconductor layer is formed over the exposed upper portion. After forming the semiconductor layer, in the second recessing, the insulating layer is recessed to a height Tfrom the substrate, so that a middle portion of the fin structure is exposed from the insulating layer. A gate structure is formed over the upper portion with the semiconductor layer and the exposed middle portion of the fin structure.