The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Jun. 09, 2017
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Tan-Ya Yin, Nantou County, TW;

Chia-Wei Huang, Kaohsiung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/768 (2006.01); H01L 29/80 (2006.01); H01L 21/8238 (2006.01); H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/3085 (2013.01); H01L 29/0692 (2013.01); H01L 29/4238 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a patterned conductive layer and an epitaxial layer. The substrate includes a first fin structure and a second fin structure respectively protruding from a top surface of the substrate, and the second fin structure has a recess. The patterned conductive layer is disposed on the substrate and covers a first end of the first fin structure. The epitaxial layer is disposed in the recess. The first end of the first fin structure and a second end of the epitaxial layer face a first direction.


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