The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Dec. 19, 2014
Applicant:
Flosfia Inc., Kyoto-shi, Kyoto, JP;
Inventors:
Toshimi Hitora, Kyoto, JP;
Masaya Oda, Kyoto, JP;
Assignee:
FLOSFIA INC., Kyoto, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/26 (2006.01); H01L 21/47 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/24 (2006.01); H01L 29/87 (2006.01); H01L 29/86 (2006.01); H01L 21/477 (2006.01); H01L 29/786 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/04 (2013.01); H01L 21/0242 (2013.01); H01L 21/02488 (2013.01); H01L 21/02565 (2013.01); H01L 21/02628 (2013.01); H01L 21/477 (2013.01); H01L 29/24 (2013.01); H01L 29/26 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/8611 (2013.01); H01L 29/872 (2013.01);
Abstract
Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.