The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Jul. 07, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Devender, Pflugerville, TX (US);

Sunil K. Singh, Mechanicville, NY (US);

M. Golam Faruk, Clifton Park, NY (US);

Dewei Xu, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 49/02 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 21/283 (2006.01); H01L 21/3105 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 28/90 (2013.01); H01L 21/0273 (2013.01); H01L 21/283 (2013.01); H01L 21/31051 (2013.01); H01L 21/31144 (2013.01); H01L 28/75 (2013.01); H01L 27/1203 (2013.01);
Abstract

The present disclosure describes a method or forming vertical natural capacitor (VNCAP) and the resulting device. The method includes applying a patterned mask over an insulation layer. The method includes forming using the patterned mask, a dielectric trench in the insulation layer. The method includes depositing a high dielectric constant k (high k) layer in the dielectric trench. The method includes forming a first trench and a second trench in the high k dielectric layer. The high k dielectric layer is disposed between the first trench and the second trench. The method includes depositing metal in the first trench and the second trench.


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