The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
May. 11, 2017
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Kenichi Kusumoto, Higashihiroshima, JP;
Yasutaka Iuchi, Higashihiroshima, JP;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/108 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10885 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/0223 (2013.01); H01L 21/02266 (2013.01); H01L 21/02332 (2013.01); H01L 21/67138 (2013.01); H01L 21/67167 (2013.01); H01L 21/67207 (2013.01); H01L 21/76826 (2013.01); H01L 21/76828 (2013.01); H01L 21/76834 (2013.01); H01L 23/53266 (2013.01); H01L 27/10814 (2013.01); H01L 27/10817 (2013.01); H01L 27/10823 (2013.01);
Abstract
A method of forming a semiconductor device includes forming a tungsten layer over a semiconductor substrate in a first chamber, transferring the substrate over which the tungsten layer is formed from the first chamber to a second chamber without exposing into an atmosphere including oxygen, and forming a silicon nitride layer on the tungsten layer in the second chamber.
Kusumoto, Kenichi. (2018). Method of forming semiconductor device including tungsten layer (U.S. Patent No. 10109635). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10109635
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile