The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Feb. 13, 2017
Applicant:
Nxp B.v., Eindhoven, NL;
Inventors:
Roelf Groenhuis, Nijmegen, NL;
Leo Van Gemert, Nijmegen, NL;
Tonny Kamphuis, Lent, NL;
Jan Gulpen, Nijmegen, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49572 (2013.01); H01L 21/4825 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 23/3114 (2013.01); H01L 23/3142 (2013.01); H01L 23/4952 (2013.01); H01L 23/49582 (2013.01); H01L 24/96 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/81 (2013.01); H01L 24/85 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81439 (2013.01); H01L 2224/81444 (2013.01); H01L 2224/81447 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/85439 (2013.01); H01L 2224/85444 (2013.01); H01L 2224/85447 (2013.01); H01L 2924/1815 (2013.01); H01L 2924/18165 (2013.01); H01L 2924/18301 (2013.01); H01L 2924/386 (2013.01);
Abstract
This disclosure relates to a method of forming a wafer level chip scale semiconductor package, the method comprising: providing a carrier having a cavity formed therein; forming electrical contacts at a base portion and sidewalls portions of the cavity; placing a semiconductor die in the base of the cavity; connecting bond pads of the semiconductor die to the electrical contacts; encapsulating the semiconductor die; and removing the carrier to expose the electrical contacts, such that the electrical contacts are arranged directly on the encapsulation material.