The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Jun. 07, 2017
Applicant:
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;
Inventor:
Tadashi Watanabe, Yokohama, JP;
Assignee:
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC., Yokohama-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/44 (2006.01); C23C 16/56 (2006.01); H01L 21/30 (2006.01); H01L 29/20 (2006.01); H01L 21/306 (2006.01); H01L 29/778 (2006.01); C23C 16/30 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); C23C 16/303 (2013.01); C23C 16/4401 (2013.01); C23C 16/56 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02664 (2013.01); H01L 21/30612 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01);
Abstract
A surface treatment method for a semiconductor layer includes growing a first layer on a substrate in a growth reactor, the first layer consisting of one of gallium nitride, aluminum gallium nitride and indium aluminum nitride; growing a second layer of gallium nitride on a surface of the first layer, the gallium nitride of the second GaN layer having a composition ratio of gallium to nitrogen larger than 2; taking the substrate out of the growth reactor after growing the second layer; and removing the second layer after taking the substrate out of the growth reactor.