The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
May. 10, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
National Taiwan University, Taipei, TW;
Sheng-Ting Fan, Taipei, TW;
Pin-Shiang Chen, Taipei, TW;
Chee Wee Liu, Taipei, TW;
Chi-Wen Liu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
National Taiwan University, Taipei, TW;
Abstract
A transistor based on topological insulators is provided. In an embodiment a topological insulator is used to form both the channel as well as the source/drain regions, wherein the channel has a first thickness such that the topological insulator material has properties of a semiconductor material and the source/drain regions have a second thickness such that the topological insulator has properties of a conductive material.